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Master's Dissertation
DOI
10.11606/D.43.2017.tde-13032017-121314
Document
Author
Full name
Marcelo Jacob da Silva
E-mail
Institute/School/College
Knowledge Area
Date of Defense
Published
São Paulo, 1999
Supervisor
Title in Portuguese
Crescimento e Caracterização de Pontos Quânticos de InAs Auto-formados
Keywords in Portuguese
Matéria Condensada ; Semicondutores
Abstract in Portuguese
Neste trabalho, estudamos o crescimento epitaxial por feixe molecular de pontos quânticos de InAs/GaAs, bem como sua propriedades ópticas e morfológicas. O método de crescimento, em baixa taxa foi usado para a fabricação de estruturas de pontos quânticos com alturas médias suficientes para a obtenção de resposta óptica nas faixas de 1,3'mü'm e 1,5'mü'm em temperatura ambiente. O interesse na manufatura desse tipo de amostra decorre do fato de serem estes os comprimento de onda de mínima atenuação de sinal em redes de transmissão por fibras ópticas. O estudo sistemático das etapas envolvidas na evolução de pontos quânticos de superfície no regime de baixa taxa de deposição permitiu entender como tais estruturas, com alturas médias bem maiores que as normalmente obtidas na literatura, puderam ser alcançadas. As condições de crescimento foram otimizadas para a produção de emissões estreitas nas faixas de comprimento de onda
Title in English
Study of the tuning of optical emission of InAs / GaAs quantum dots in the 1,3'mü'm and 1,5'mü'm regions
Keywords in English
Condensed matter
semiconductors
Abstract in English
In this work, we studied the evolution of InAs quantum dots grown by MBE as a function o f the amount o f material deposited. The monitoring o f the quantum-dot prope1ties during their evolution was possible because of the growth of a sample in which the thickness o f material was varied continuously on its area. The structure o f the samples used in this work consists oftwo quantmn-dot layers, one on the samples' surface and the other between GaAs barriers. The first quantum-dot layer was used in the morphological characterization, through AFM images, and the second one was probed by photoluminescense measurements. Moreover, the structure includes an InxGa1_xAs quantum well to be used as a reference. The possibility of carrying out optical and morphological measurements on the same sample provided us with a way to make comparisons between the topographical and optical features, yielding some interesting results, as the dependence of the optical emission with the surface quantum-dot coverage and its degradation when the islands density is higher than 1 ÜÜÜJ.Lm-2
 
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29823_SILVA.pdf (14.45 Mbytes)
Publishing Date
2017-03-13
 
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