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Master's Dissertation
DOI
10.11606/D.54.1990.tde-12022015-144437
Document
Author
Full name
Jean-jacques Georges Soares de Groote
Institute/School/College
Knowledge Area
Date of Defense
Published
São Carlos, 1990
Supervisor
Committee
Hornos, Jose Eduardo Martinho (President)
Coelho, Helio Teixeira
Hipolito, Oscar
Title in Portuguese
Excitons ligados a impurezas doadoras em semicondutores
Keywords in Portuguese
Não disponível
Abstract in Portuguese
O estudo de excitons livres é realizado de modo adequado por uma simples aproximação hidrogenóide, mas, quando estão ligados a imperfeições torna-se necessário uma aproximação matemática mais sofisticada. Neste trabalho, o sistema de três corpos éxciton-impureza é analisado pelo método das coordenadas hiperesféricas na aproximação adiabática, introduzindo este método em problemas de física do estado sólido. Entre os resultados obtidos estão valores precisos de energia de ligação para estados fundamentais e a predição de ressonâncias
Title in English
Not available
Keywords in English
Not available
Abstract in English
The study of free excitons can be adequately performed through a simple hydrogenoide approximation, but, when they are linked to impurities a more sophisticated mathematical approach is required. In this work, the exciton-impurity three body systems is analyzed with the method of the hyperspheric coordinates in the adiabatic approach, introducing this method to solid state physical problems. Included in obtained results are precise values for the bonding energy for the ground state and the prediction of resonances
 
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Publishing Date
2015-02-13
 
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