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Master's Dissertation
DOI
10.11606/D.54.1992.tde-15042014-113338
Document
Author
Full name
José Camilo Barbosa
Institute/School/College
Knowledge Area
Date of Defense
Published
São Carlos, 1992
Supervisor
Committee
Ioriatti Júnior, Lidério Citrângulo (President)
Fazzio, Adalberto
Nunes, Luiz Antonio de Oliveira
Title in Portuguese
Aproximação de Thomas-Fermi aplicada a estruturas semicondutoras delta-dopadas
Keywords in Portuguese
Semicondutores delta-dopadas
Super-redes
Thomas-Fermi
Abstract in Portuguese
Neste trabalho usamos a teoria de Thomas-Fermi para estudar as propriedades eletrônicas de semicondutores planarmente dopados, ou delta-dopados, com densidade de dopantes de moderada a alta. O principal objetivo do trabalho é a verificação de que esta teoria apresenta muito bons resultados com os do método auto-consistente na aproximação de Hartree quando aplicada a este tipo de problema. Verificamos que muitas situações físicas relacionadas a semicondutores delta-dopados podem ser descritas de uma maneira simples e com muito bons resultados. Estudamos o problema de um poço isolado e o problema da super-rede, comparando os resultados de Thomas-Fermi e Hartree.
Title in English
The Thomas-Fermi theory of Delta-Si:GaAs superlattices
Keywords in English
Delta-doped semiconductors
Superlattices
Thomas-Fermi
Abstract in English
In this work we have used the Thomas-Fermi theory to study the electronic properties of planar doped semiconductors, or delta-doping, with a moderate to high density of dopants. The main aim of this work is to verify that this theory gives very good results when compared with the self-consistent method in the Hartree aproximation. We have checked that many physical situations related to delta-doping can be described in a simple manner and also with very good results. We have studied the single delta problem and the superlattice problem and we have compared the Thomas-Fermi´s and Hartree´s results.
 
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Publishing Date
2014-04-16
 
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