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Master's Dissertation
DOI
10.11606/D.54.1993.tde-15042014-140240
Document
Author
Full name
Virgílio de Carvalho dos Anjos
Institute/School/College
Knowledge Area
Date of Defense
Published
São Carlos, 1993
Supervisor
Committee
Ioriatti Júnior, Lidério Citrângulo (President)
Brum, Jose Antonio
Degani, Marcos Henrique
Title in Portuguese
Espalhamento Raman eletrônico via flutuações de densidade de spin em super-redes δ-Si:GaAs
Keywords in Portuguese
δ-Si:GaAs
Espalhamento Raman
Super-redes
Abstract in Portuguese
Neste trabalho apresentamos um cálculo teórico para o espalhamento Raman eletrônico via flutuações de densidade de spin de uma super-rede δ-dopada de GaAs. A estrutura eletrônica da super-rede é determinada utilizando-se a teoria do funcional densidade dentro da aproximação de densidade local. O cálculo da seção de choque revela que sob condições de extrema ressonância existe uma forte dependência das formas de linha com a freqüência de excitação indicando a coexistência de um gás bi e tri-dimensional de elétrons nesta estrutura. Os resultados obtidos mostram excelente acordo entre teoria e experimento.
Title in English
Electronic Raman spectrum of spin-density fluctuations in δ-Si:GaAs superlattices
Keywords in English
δ-Si:GaAs
Raman scattering
Superlattices
Abstract in English
In this work we theoretically investigate the electronic Raman scattering by spin density fluctuations in periodically δ-doped GaAs. The electronic structure of the superlattice is determined using density functional theory within the local-density-functional approximation. The calculation of the cross section reveals a strong dependence of the line shape on the exciting frequency under conditions of extreme resonance, which indicates the coexistence of a two and three-dimensional electron gas. The results show an excellent agreement between theory and experiment.
 
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Publishing Date
2014-04-16
 
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