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Master's Dissertation
DOI
10.11606/D.54.1987.tde-22052009-131752
Document
Author
Full name
Valmir Antonio Chitta
Institute/School/College
Knowledge Area
Date of Defense
Published
São Carlos, 1987
Supervisor
Committee
Marques, Gilmar Eugenio (President)
Ioriatti Junior, Liderio Citrangulo
Leite, Jose Roberto
Title in Portuguese
Propriedades eletrônicas de hetero-estruturas de semicondutores zincblende.
Keywords in Portuguese
Estrutura eletrônica
Heteroestruturas semicondutoras
Magneto-óptica
Método k.p
Semicondutores II-IV
Abstract in Portuguese
Utilizou-se um Hamiltoniano KP (6x6) do tipo Kane para, se estudar a estrutura de bandas e níveis de Landau para heteroestruturas de semicondutores zincblende dos grupos III-V e II-VI. Os efeitos do acoplamento entre as bandas de condução e valência, da mistura dos estados da banda de valência, da não-parabolicidade dos níveis, da total degenerescência dos níveis, do warping e das descontinuidades das massas efetivas nas heterointerfaces são levados em conta. Mostrou-se que a interação entre as bandas de condução e valência não pode ser desprezada, mesmo para semicondutores de gap largo, como citado em trabalhos existentes na literatura. Para um estudo sistemático do modelo, utilizou-se um poço quântico de GaAs Ga(Al)As e então aplicou-se o modelo a um sistema de semicondutores semi-magnéticos (poço quântico de CdTe Cd(Mn)Te).
Title in English
Electronic properties of zincbled semiconductor heterostructures.
Keywords in English
Electronic structure
II-IV semiconductors.
k.p Method
Magneto-optics
Semiconductor heterostructures
Abstract in English
A Kane-like (6x6) KP Hamiltonian is used to study the subband structure and Landau levels for group III-V and group II-VI zincblende semiconductor heterostructures. The effects of conduction-valence band coupling, valence band states mixing, nonparabolicity of the levels, the full degeneracy of the levels, warping and effective masses discontinuities at the heterointerfaces are taken into account. It is shown that the interaction between conduction-valence bands cannot be neglected, even so the semicondutctor have wide gap, as claimed in previous work in the literature. GaAs-Ga(Al)As quantum well was used as a model for a systematic study of the effects of each effective KP parameters. Then, it was applied to the study the subband structure of semi-magnetic semiconductor system (a quantum well of CdTe-Cd(Mn)Te.
 
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Publishing Date
2009-05-26
 
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