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Master's Dissertation
DOI
10.11606/D.54.1986.tde-13102009-111526
Document
Author
Full name
Luis Vicente de Andrade Scalvi
Institute/School/College
Knowledge Area
Date of Defense
Published
São Carlos, 1986
Supervisor
Title in Portuguese
Simulação numérica da fase líquida do crescimento de silício pelo método Czocharalski.
Keywords in Portuguese
Czochralski
Elementos finitos
Fase líquida
Silício
Simulação numérica
Abstract in Portuguese
Visando compreender os fluxos na fase líquida do crescimento de silício pelo método Czochralski, é feita a Simulação Numérica do silício fundido, resolvendo-se as equações que governam o fenômeno da convecção forçada no fluido: Balanço de Quantidade de Movimento e Balanço de Massa. A técnica numérica escolhida é a de Elementos Finitos, onde é utilizada a formulação de Galerkin, com aproximações quadráticas nas componentes da velocidade e linear na pressão. A partir de várias combinações de rotações cadinho-cristal, os perfis de velocidade obtidos são analisados com relação aos efeitos de incorporação de impurezas e/ou dopantes no cristal em crescimento.
Title in English
Numerical simulation of liquid phase on silicon growth by Czochralski method
Keywords in English
Czochralski
Finite element
Liquid phase
Numerical simulation
Silicon
Abstract in English
In order to visualise the flow conditions during crystal growth of Silicon by the Czochralski technique, a numerical simulation is done. It is used the Finite Element Method with the Galerkin Formulation , and with quadratic approximations on the components of the velocity and linear approximations on the pressure. Many combinations of crystal and crucible rotations are analised and discussed considering optimal growth conditions.
 
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LuisScalviM.pdf (3.44 Mbytes)
Publishing Date
2009-10-20
 
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