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Master's Dissertation
DOI
10.11606/D.54.1987.tde-22052009-133717
Document
Author
Full name
Ivo Alexandre Hummelgen
Institute/School/College
Knowledge Area
Date of Defense
Published
São Carlos, 1987
Supervisor
Committee
Dumke, Vicente Roberto (President)
Carvalho, Rene Ayres
Rodrigues, José de Anchieta
Title in Portuguese
Investigação de problemas relacionados a mobilidade térmica de discordâncias utilizando aplicação de carga concentrada.
Keywords in Portuguese
Carga concentrada
Discordâncias
Mobilidade térmica
Abstract in Portuguese
A mobilidade térmica de discordância foi investigada em silício puro, floating zone, livre de discordâncias, utilizando medidas de rosetas produzidas por indentação. A mobilidade das discordâncias produzidas em amostras cobertas com camada de óxido crescida termicamente foi comparada com a de superfície não coberta. Um aumento da mobilidade térmica foi encontrado em amostras cobertas. Também foram obtidas informações sobre modificações na estrutura de discordâncias em rosetas relacionadas à anisotropia na dureza. Esse efeito foi encontrado como sendo dependente da temperatura.
Title in English
Investigation of problems related to the thermal mobility of dislocations using indentation.
Keywords in English
Dislocations
Indentation
Thermal mobility
Abstract in English
The thermal mobility of dislocations was investigated in intrinsic floating zone dislocation free silicon using indentation dislocation rosette (IDR) measurements. The mobility of introduced dislocations in samples covered with a thermal oxide layer was compared with that with a bare surface. An increase on dislocation thermal mobility was found in covered samples. Also information about dislocations pattern structure modifications on IDR related to hardness anisotropy was obtained. This effect was found to be temperature dependent.
 
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Publishing Date
2009-05-26
 
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