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Master's Dissertation
DOI
10.11606/D.76.1999.tde-01042014-171353
Document
Author
Full name
Marcus Vinícius Alves
Institute/School/College
Knowledge Area
Date of Defense
Published
São Carlos, 1999
Supervisor
Committee
Marega Junior, Euclydes (President)
Faria, Roberto Mendonça
Panepucci, Roberto Ricardo
Title in Portuguese
Estudo de técnicas de nanofabricação aplicada à filmes semicondutores
Keywords in Portuguese
Litografia
Microeletrônica
Semicondutores
Abstract in Portuguese
Este trabalho teve como objetivo principal o estudo de técnicas de nanofabricação aplicadas a filmes semicondutores do grupo 111-V, crescidos pela técnica de epitaxia por feixe molecular. Padrões, visando o domínio da técnica e a produção de nano-estruturas foram criados em filmes de GaAs utilizando-se a técnica de litografia por feixe de elétrons e ataques químicos. Os padrões foram gerados a partir de um software especial de controle que, acoplado ao microscópio eletrônico de varredura, através de uma interface, permite o controle externo da varredura x-y do feixe de elétrons. Estudamos o comportamento da espessura do filme de elétron-resiste poli (metacrilato de metila) (PMMA) em função da temperatura, aplicando soluções com pesos moleculares variados sobre filmes semicondutores, dissolvidos em Xileno, Monoclorobenzeno e Acetona. Investigamos o uso do ultra-som nos processos de revelação do PMMA e no ataque químico de superfícies de GaAs. Através da análise do ataque químico empregando várias formulações a base de ácidos em GaAs (100) e (3 1 l)A e B, determinamos a velocidade de ataque em cada caso, classificando as propriedades obtidas para a superfície. Em GaAs (100) avaliamos a dependência entre a rugosidade da face atacada e o tempo de ataque para uma solução de NH4OH:H2O (pH=7). Os resultados por nós obtidos formam um conjunto de dados que servirão de apoio a trabalhos futuros, desenvolvidos em nano-fabricação aplicada a filmes de GaAs, crescido em planos diferentes do (100).
Title in English
Development of nanofabrication techniques applied to semiconductor films
Keywords in English
Lithography
Microelectronics
Semiconductors
Abstract in English
This work had as main objective the study of nanofabrication techniques applied to thin semiconductor 111-V films, grown by molecular beam epitaxy. Patterns were generated to verifying the domain of the technique in the production of nanostructures in GaAs films, by means of chemical attack and electro-lithography. The patterns were generated with special software that connects the electronic microscope(Leo 440), through an interface that allows the externa1 control of the x-y sweeping for the electron beam. We studied the behaviour of the thickness of the electron-resists films of poly-methyl-metacrilate in hnction of the Spinner rotation, applying solutions with varied molecular weights on semiconductor films, dissolved in Xilene, Monoclorobenzene and Acetone. We investigated the use of the ultra-sound in the processes of revelation of PMMA and in the chemical attack of surfaces of GaAs. Through the analysis of the chemical attack using severa1 formulations of acids in GaAs (100) and (311)A and B, we determined the attack rate in each case, classifying the properties obtained for the surface. In GaAs (100) we evaluated the dependence between the nano-rugosity of the attacked face with the time of attack for a solution of NH4OH:H2O2 (pH=7). The results obtained by us form a group of data that will support future works, to be developed in nanofabrication applied to GaAs thin films grown in plans different from the (100).
 
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Publishing Date
2014-04-03
 
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