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Master's Dissertation
DOI
10.11606/D.88.1999.tde-21082015-093450
Document
Author
Full name
Luciara Benedita Barbosa
Institute/School/College
Knowledge Area
Date of Defense
Published
São Carlos, 1999
Supervisor
Committee
Hernandes, Antonio Carlos (President)
Leite, Edson Roberto
Veissid, Nelson
Title in Portuguese
Preparação e Propriedades Elétricas e Ópticas de Cristais de Pbl2
Keywords in Portuguese
Não disponível
Abstract in Portuguese
Realizamos o crescimento de monocristais de PbI2 e de PbI2:TlI com a composição de TlI variando de 1000, 5000 e 10000ppm. Os cristais de PbI2 puro e dopado com TlI foram crescidos pela técnica de Bridgman. As características dos cristais foram determinadas por difração de raios-X, absorção óptica, fotoluminescência e análise do decaimento da corrente elétrica com tempo. A largura da banda proibida determinada para os cristais de PbI2 puro e dopado fbi de 2,3 eV. Os espectros de fotoluminescência obtidos mostraram três linhas de emissão em 2,493 eV, 2,498 eV e 2,429 eV, os quais foram associados a recombinação de excitons ligados, recombinação de excitons livres e recombinação de níveis de defeitos, respectivamente. Nós determinamos quatro principais níveis de armadilhas com 0,66 eV, 0,68 eV, 0,72 eV e 0,76 eV, a temperatura ambiente, para ambos PbI2 puro e dopado. Também determinamos a resistividade no escuro, a temperatura ambiente, e os valores foram de 1011 .cm e 1012.cm para o PbI2 puro e de 109.cm e 1010.cm para o PbI2 :TlI. Os testes de detetores de radiação ionizante, os quais foram fabricados com nossos cristais de iodeto de chumbo não mostraram resposta espectrométrica, mesmo sendo estes transparentes e de boa qualidade cristalina
Title in English
Not available
Keywords in English
Not available
Abstract in English
The Pure and TlI doped PbI2 single crystals were grown by Bridgman technique. The TlI nominal composition used was of 1000, 5000 and 10000ppm. The crystals characterization of was done by X-ray diffraction, optical absorption, photoluminescence and electrical current-time decay analysis. The gap energy of pure and doped PbI2 crystals was determined as 2.3 eV. The photoluminescence spectra was obtained and it showed three ernission lines at 2.493 eV, 2.498 eV and 2.429 eV, which were associated to a bound exciton recombination, a free exciton recombination and a defect leve1 recombination, respectively. We have determined four main trapping levels at 0.66 eV, 0.68 eV, 0.72 eV and 0.76 eV eV, at room temperature for both pure and doped PbI2. We have also determined the dark resistivity at room temperature, and the measured values were 1011 .cm, 1012.cm for PbI2 and 109.cm, 1010.cm for PbI2 :TlI. Tests in radiation detectors, which were made with lead iodide crystals, were performed. The results didn't show any spectrometric response even when single and transparent crystals were used
 
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Publishing Date
2015-08-22
 
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